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| BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A s s s s s s s V DSS 100 V R DS( on) < 0.25 ID 11 A TYPICAL RDS(on) = 0.23 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 3 1 2 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID I DM P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN Humidity Category (DIN 40040) IEC Climatic Category (DIN IEC 68-1) o o Value 100 100 20 11 44 70 -65 to 175 175 E 55/150/56 Unit V V V A A W o o C C June 1993 1/7 BUZ72A THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.14 62.5 o o C/W C/W AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Value 11 36 9 7 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VG S = 0 Min. 100 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V D S = 0) V GS = 20 V Tj = 125 oC ON () Symbol V G S(th) R DS( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10 V Test Conditions ID = 250 A ID = 5 A Min. 2 Typ. 2.9 0.23 Max. 4 0.25 Unit V DYNAMIC Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS = 25 V V DS = 25 V ID = 5 A f = 1 MHz VG S = 0 Min. 2.7 Typ. 4.5 330 90 25 450 120 40 Max. Unit S pF pF pF SWITCHING Symbol t d(on) tr t d(off ) tf Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Test Conditions V DD = 50 V R GS = 4.7 I D = 5.5 A V GS = 10 V Min. Typ. 10 50 25 20 Max. 15 75 40 30 Unit ns ns ns ns 2/7 BUZ72A ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol IS D I SD M V S D () t rr Q rr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge I SD = 22 A I SD = 11 A V DD = 20 V VG S = 0 di/dt = 100 A/s T j = 150 o C 80 0.22 Test Conditions Min. Typ. Max. 11 44 1.6 Unit A A V ns C () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Thermal Impedance Derating Curve Output Characteristics 3/7 BUZ72A Transfer Characteristics Transconductance Static Drain-Source On Resistance Maximum Drain Current vs Temperature Gate Charge vs Gate-Source Voltage Capacitance Variation 4/7 BUZ72A Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-Drain Diode Forward Characteristics 5/7 BUZ72A TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. F2 F L5 L7 L6 L9 L4 G 6/7 H2 P011C BUZ72A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7 |
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